TECHiFAB Publications List
Open Access Papers
- [R-2] H. Schmidt, “Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage”, J. Appl. Phys. 135, 200902, 2024 (https://doi.org/10.1063/5.0206891)
- [R-1] Sahitya V. Vegesna, Venkata Rao Rayapati, Heidemarie Schmidt, Evaluating the transport properties of interface-type, analog memristors (Phys. Rev. Applied 2024) (https://doi.org/10.1103/PhysRevApplied.22.034028)
- [R2] T. You, L.P. Selvaraj, H. Zeng, W. Luo, N. Du, D. Bürger, I. Skorupa, S. Prucnal, A. Lawerenz, T. Mikolajick, O.G. Schmidt, H. Schmidt, “An Energy‐Efficient, BiFeO3‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions,” Adv. Elect. Mat. 2, 1500352, 2016. (https://doi.org/10.1002/aelm.201670017)
- [R6] T. You, X. Ou, G. Niu, F. Bärwolf, G. Li, N. Du, D. Bürger, I. Skorupa, Q. Jia, W. Yu, X. Wang, O.G. Schmidt, H. Schmidt, “Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes,” SCIENTIFIC REPORTS 5, 18623, 2015. (https://www.nature.com/articles/srep18623)
- [R8] N. Du, M. Kiani, C.G. Mayr, T.You, D. Bürger, I. Skorupa, O. G. Schmidt, H. Schmidt, “Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs,” Front. In Neurosc. 9, 227, 2015. (https://www.frontiersin.org/journals/neuroscience/articles/10.3389/fnins.2015.00227/full)
- [R13] Y. Shuai, X. Ou, W. Luo, A. Mücklich, D. Bürger, S. Zhou, C. Wu, Y. Chen, W. Zhang, M. Helm, T. Mikolajick, O.G. Schmidt, H. Schmidt, “Key concepts behind forming-free resistive switching incorporated with rectifying transport properties,” SCIENTIFIC REPORTS 3, 2208, 2013. (https://www.nature.com/articles/srep02208)
Further Papers
- [R-2] H. Schmidt, “Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage”, J. Appl. Phys. 135, 200902, 2024
- [R-1] Sahitya V. Vegesna, Venkata Rao Rayapati, Heidemarie Schmidt, “Evaluating the transport properties of interface-type, analog memristors”, Phys. Rev. Applied 22, 034028, 2024
- [R0] Jonas Ruchti, Sahitya V. Vegesna, Venkata Rao Rayapati, Heidemarie Schmidt, Michael Pehl, “On the Importance of Physical Model Parameters for PUF Performance: A Case Study on BFO Memristors”, 2024 39th Conference on Design of Circuits and Integrated Systems (DCIS), 13-15 November 2024
- [R1] N. Du, N. Manjunath, Y. Li, S. Menzel, E. Linn, R. Waser, T. You, D. Bürger, I. Skorupa, D. Walczyk, C. Walczyk, O. G. Schmidt, H. Schmidt, “Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching,” Phys. Rev. Appl. 10, 054025, 2018.
- [R2] T. You, L.P. Selvaraj, H. Zeng, W. Luo, N. Du, D. Bürger, I. Skorupa, S. Prucnal, A. Lawerenz, T. Mikolajick, O.G. Schmidt, H. Schmidt, “An Energy‐Efficient, BiFeO3‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions,” Adv. Elect. Mat. 2, 1500352, 2016.
- [R3] Y. Lei, H. Zeng, W. Luo, Y. Shuai, X. Wei, N. Du, D. Bürger, I. Skorupa, J. Liu, O.G. Schmidt, W. Zhang, H. Schmidt, “Ferroelectric and flexible barrier resistive switching of epitaxial BiFeO3 films studied by temperature-dependent current and capacitance spectroscopy,” J. Mat. Sci. – Mat. In Elect. 27, 7927-7932, 2016.
- [R4] A. Ascoli, V. Senger, R. Tetzlaff, N. Du, O.G. Schmidt, H. Schmidt, “BiFeO3 memristor-based encryption of medical data,” IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) 1602-1605, 2016.
- [R5] H. Schmidt, T. Mikolajick, R. Waser, E. Linn, „Big Data ohne Energiekollaps: Neuartige, lernfähige Memristor‐Logik,“ Physik in unserer Zeit 46, 84-89, 2015.
- [R6] T. You, X. Ou, G. Niu, F. Bärwolf, G. Li, N. Du, D. Bürger, I. Skorupa, Q. Jia, W. Yu, X. Wang, O.G. Schmidt, H. Schmidt, “Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes,” SCIENTIFIC REPORTS 5, 18623, 2015.
- [R7] L. Jin, Y. Shuai, X. Ou, W.B. Luo, C.G. Wu, W.L. Zhang, D. Bürger, I. Skorupa, T. You, N. Du, O.G. Schmidt, H. Schmidt, “Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films,” Applied Surface Science 336, 354-358, 2015.
- [R8] N. Du, M. Kiani, C.G. Mayr, T.You, D. Bürger, I. Skorupa, O. G. Schmidt, H. Schmidt, “Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs,” Front. In Neurosc. 9, 227, 2015.
- [R9] T. You, Y. Shuai, W. Luo, N. Du, D. Bürger, I. Skorupa, R. Hübner, S. Henker, C. Mayr, R. Schüffny, T. Mikolajick, O. G. Schmidt, H. Schmidt, “Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics,” Advanced Functional Materials 24, 3357–3365, 2014.
- [R10] L. Jin, Y. Shuai, X. Ou, P.F. Siles, H.Z. Zeng, T. You, N. Du, D. Bürger, I. Skorupa, S. Zhou, W.B. Luo, C.G. Wu, W.L. Zhang, T. Mikolajick, O.G. Schmidt, H. Schmidt, “Resistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes,” phys. Stat. sol. A 211, 2563-2568, 2014.
- [R11] T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, H. Schmidt, “Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors,” ACS Applied Materials & Interfaces 6, 19758–19765, 2014.
- [R12] X. Ou, Y. Shuai, W. Luo, P.F. Siles, R. Kögler, J. Fiedler, H. Reuther, S. Zhou, R. Hübner, S. Facsko, M. Helm, T. Mikolajick, O.G. Schmidt, H. Schmidt, “Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts,” ACS Applied Materials 5, 12764-12771, 2013.
- [R13] Y. Shuai, X. Ou, W. Luo, A. Mücklich, D. Bürger, S. Zhou, C. Wu, Y. Chen, W. Zhang, M. Helm, T. Mikolajick, O.G. Schmidt, H. Schmidt, “Key concepts behind forming-free resistive switching incorporated with rectifying transport properties,” SCIENTIFIC REPORTS 3, 2208, 2013.
- [R14] Y. Shuai, X. Ou, W. Luo, N. Du, C. Wu, W. Zhang, D. Bürger, C. Mayr, R. Schüffny, S. Zhou, M. Helm, H. Schmidt, “Nonvolatile Multilevel Resistive Switching in Irradiated Thin Films,” IEEE Electr. Dev. Lett. 34, 54-56, 2012.
- [R15] Y. Shuai, X. Ou, C. Wu, W. Zhang, S. Zhou, D. Bürger, H. Reuther, S. Slesazeck, T. Mikolajick, M. Helm, H. Schmidt, “Substrate effect on the resistive switching in BiFeO3 thin films,” J. Appl. Phys. 111, 07D906, 2012.
- [R16] Y. Shuai, S. Zhou, D. Bürger, M. Helm, H. Schmidt, Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt, J. Appl. Phys. 109, 124117, 2011.
- [R17] Y. Shuai, S. Zhou, S. Streit, H. Reuther, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm, H. Schmidt, Reduced leakage current in BiFeO3 thin films with rectifying contacts, Appl. Phys. Lett. 98, 232901, 2011.
